Semiconductor Device Electrical Performance Test System

Application Introduction

This is the key reliability inspection before semiconductor discrete devices and integrated circuits leave the factory. It covers insulation withstand voltage, dielectric breakdown, High Temperature Reverse Bias aging (HTRB), avalanche resistance and leakage current testing. Defective units are filtered to guarantee delivery reliability for IGBTs, MOSFETs, diodes, optocouplers and various IC products.

Core Power Function

1. Provide programmable wide-range DC/pulse high voltage to simulate extreme electrical stress;

2. High-precision voltage/current measurement captures breakdown voltage, leakage current and avalanche parameters accurately;

3. Microsecond-level cut-off protection stops output instantly during breakdown to avoid device damage while recording precise failure data.

Differentiated Advantages

Output range 0~100kV, measurement accuracy ≤0.1% FS, comprehensive protection, RS485/232 remote control, compatible with automated production test lines.

Working Principle

Controllable DC or pulse high voltage is applied to simulate harsh operating stress. Critical electrical parameters such as breakdown voltage, leakage current, aging lifetime and avalanche tolerance are measured to eliminate unqualified devices and ensure factory reliability.

Application Scenarios

IGBT/MOSFET power device testing, optocoupler withstand voltage inspection, IC reliability verification, final production testing of discrete components and failure analysis.

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