Semiconductor

CCP / ICP Plasma Etching

Plasma etching is the core patterning process for advanced processes below 28nm, divided into CCP capacitive coupled etching for high aspect ratio dielectric etching and ICP inductive coupled etching for low-damage silicon / metal etching. It realizes nano-scale pattern transfer by physical bombardment and chemical reaction for logic chips and 3D NAND storage.

Magnetron Sputtering PVD Coating

Magnetron sputtering is essential for wafer metallization. High-energy ions bombard targets to deposit uniform metal layers such as interconnects, barrier layers and seed layers. Compatible with Al, Cu, Ti, Au and other materials for wafer manufacturing and advanced packaging.

Wafer Electrostatic Chuck ESC Solution

ESC electrostatic chucks hold wafers tightly by electrostatic force in lithography, etching and deposition tools. Stress-free full contact improves uniformity for 12-inch wafer processes including Coulomb type and J-R type.

3rd-Gen Semiconductor SiC / GaN Process Power

Full-process solutions for SiC and GaN wide-bandgap semiconductors including crystal growth, epitaxy, high-energy implantation, high-temperature annealing and high-voltage testing for new energy vehicles, PV and 5G RF devices.